Initiated by the progress in thin film growth since the discovery of high TC superconductors, the field of Oxide Electronics took off at the end of the 1990’s and is now growing at an exponential pace. Major breakthroughs over the last fifteen years include the advent of multiferroics and the discovery of several unexpected phases at oxide interfaces, epitomized by the high-mobility two-dimensional electron gas found at the interface between two band insulators, LaAlO3 and SrTiO3. Novel physical phenomena have also been revealed in ultrathin films of ferroelectric or correlated electron systems, as well as giant responses and phase transitions induced by light or electric field, with potential for innovative devices. During this 5th Edition of the International School of Oxide Electronics (ISOE2019), basic notions of solid-state physics (ferroelectricity, magnetism, optics, correlations, etc) will be recalled, but the school will also give an extended overview of the field, covering topics such as multiferroics, oxide interfaces, domain walls, spintronics. Oxide-based devices will also be presented in details, as well as key advanced characterization and computational techniques. ISOE2019 aims at gathering PhD students, post-docs, young scientists and senior researchers working in Oxide Electronics for almost two weeks to build up the future Oxide Electronics scientific community.
The ISOE2019 will be held at the Institut d’Etudes Scientifiques de Cargèse (IESC), a CNRS facility created in the 1960s and organizing scientific meetings throughout the year. It is located on the west shore of Corsica, at the entrance of Cargèse, a small village of 800 inhabitants (50 km north of Ajaccio). Beaches are located in the vicinity of the Institute and on the opposite side of the village. Corsica is an island in the Mediterranean sea, 150 km south of the French coast and offers beautiful landscapes and historical landmarks.
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