Predoctoral Position (MBE of GaSb integrated on Si PICs)
We are looking for a predoctoral researcher on the molecular beam epitaxy (MBE) growth, design, and characterization of novel GaSb-based structures integrated on Silicon PICs with emission in the Mid-Infrarred region for applications such as health care, biosensing and environmental monitoring.
We offer a predoctoral position for a highly motivated researcher with strong track- record, strongly committed to contribute to a breakthrough project in photonics and material science.
The research will be carried out at the Nanophotonics Technology Center (https://ntc.webs.upv.es/) of the Universitat Politècnica de València, in collaboration with renowned partners. Research group (https://ntc.webs.upv.es/iii-v-semiconductors- and-graphene/)
REQUIREMENTS:
Full professional competence in English.
Ability to work both independently and collaboratively.
Master degree in physics, materials/telecommunication engineering, chemistry or
similar.
JOB CONDITIONS:
Three-year contract; possibility of extension.
Annual Gross Salary: 18,000 € – 22,000 €; commensurate with experience.
Health and Social benefits included according to Spanish law.
Work in a highly competitive international environment.
Full access to a Unique Scientific and Technical Facility of the Spanish Government:
ICTS MICRONANOFABS, NTC-UPV node (https://micronanofabs.org/en/home-2/)
Should you are interested, please send us your CV and motivation letter: vjgomher@ntc.upv.es, lmonge@ntc.upv.es and misalas@ntc.upv.es