A fully funded PhD position is open at CEA Grenoble on the modelling of silicon and germanium spin qubits (starting date: September/October 2023).
Silicon and Germanium spin qubits have made outstanding progress in the past two years [1, 2]. In these devices, the elementary information is stored as a coherent superposition of the spin states of an electron or hole in a Si/SiO2 or SiGe heterostructure. These spins can be manipulated electrically owing to spin-orbit coupling, and are entangled through exchange interactions, allowing for a variety of one- and two-qubit gates required for quantum computing and simulation. Grenoble, one of the leading scientific cities in France, is promoting original spin qubit platforms based on Si and Ge, and holds various records in spin lifetimes  and spin-photon interactions .
At CEA/IRIG, we support the progress of these quantum technologies with state-of-the-art modelling [3, 4]. In particular, we are developing the TB_Sim code, able to describe very realistic qubit structures down to the atomic scale if needed. The aim of this PhD is to model the quantum dynamics of single and coupled Si/Ge spin qubits in relation with ongoing experiments, using a combination of analytical and numerical (TB_Sim) techniques. The project will address spin manipulation and entanglement in arrays of spin qubits, the response to noise and disorder (decoherence), and the interactions with photons (circuit quantum electrodynamics). The PhD candidate will have the opportunity to interact with a lively community of experimentalists working on spin qubits at CEA and CNRS. This PhD is expected to start in September/October 2023 and is fully funded by a grant from the french ANR.
To apply, send a CV to Yann-Michel Niquet (firstname.lastname@example.org).
 A four-qubit germanium quantum processor, N. W. Hendrickx et al., Nature 591, 580 (2021).
 Universal control of a six-qubit quantum processor in silicon, S. G. J. Philips et al., Nature 609, 919 (2022).
 A single hole spin with enhanced coherence in natural silicon, N. Piot, …, Y.M. Niquet et al., Nature Nano 17, 1072 (2022).
 Strong coupling between a photon and a hole spin in silicon, C. X. Yu, …, Y.M. Niquet et al., Nature Nano (2023) [arXiv:2206.14082].
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